Article 8 – Coexistence and interplay of two ferroelectric mechanisms in Zn1-xMgxO

Abstract: Oxygen-defective metal oxides like cerium oxides exhibit giant electrostriction and field-induced piezoelectricity due to a dynamic electrosteric interplay between oxygen defects, V··O, and the fluorite lattice. While such mechanisms are generally attributed to oxygen vacancies, recent results also highlight that trapped cationic defects, Ce′Ce, i.e. small polarons, can contribute

Abstract: Using the Landau-Ginzburg-Devonshire phenomenological approach we explore the strain-polarization coupling in the low-dimensional van der Waals ferrielectrics. We evolve the analytical model of the piezoelectric susceptibility of the material in response to the periodic strain modulation, such as caused by a surface acoustic wave. Numerical calculations are performed for

Abstract: Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric-semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal-oxide-semiconductor technology. Recent discoveries of ferroelectricity in

Abstract: Unique polar properties of nanoscale hafnia-zirconia oxides (HfxZr1−xO2) are of great interest for condensed matter physics, nanophysics, and advanced applications. These properties are connected (at least partially) to the ionic–electronic and electrochemical phenomena at the surface, interfaces, and/or internal grain boundaries. Here, we calculated the phase diagrams, dielectric permittivity,

Abstract: Ferroionic materials combine ferroelectric properties and spontaneous polarization with ionic phenomena of fast charge recombination and electrodic functionalities. In this paper, we propose the concept of tunable polarization in CeO2−δ (ceria) thin (5 nm) films induced by built-in remnant polarization of a BaTiO3 (BTO) ferroelectric thin film interface, which

Abstract: Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the ferrielectric film. The NC state is