On May 8th 2025, the „Hacking piezoelectrics for next-gen electromechanical devices” online workshop took place, during which the participants of our project gave their presentations
1. Advanced scanning probe microscopy for quantitative characterization of electromechanical properties and charge transport in ferroelectrics
by Dr. Denis Alikin (University of Aveiro, Portugal)
The growing demand for two-dimensional (2D) materials is driven by the ongoing trend toward miniaturization in electronic devices. 2D-materials exhibit properties significantly different compared to bulk analogues due to the increased influence of surface states and quantum phenomena. While their structural properties can be studied with high spatial resolution using techniques such as transmission electron microscopy, high resolution X-ray spectroscopy, and microscopy, obtaining accurate electromechanical and electrical measurements with conventional techniques remains challenging due to various experimental difficulties. In this talk, I will present our recent advancements in applying scanning probe microscopy (SPM) to measure electromechanical properties, electronic transport, and defect dynamics in ferroelectric thin films and bulk materials. Particular emphasis will be placed on achieving reliable and quantitative interpretation of SPM data.
2. Activated Piezoelectricity in HfZrO2 thin films,
by Dr. Milica Vasiljevic (Technical University of Denmark, Denmark)
Hafnium zirconium oxide (Hf₀.₅Zr₀.₅O₂, HZO) exhibits unconventional ferroelectricity and nanoscale polar/non-polar phase interplay, yet its electromechanical properties remain largely unexplored. Here, we investigate its electrostriction and inverse piezoelectricity, analyzing the role of phase, microstructure, and composition in HZO thin films. We observe an exceptionally high electrostriction coefficient (M ≈ 1×10⁻¹⁴ m²V⁻²), absent in pure HfO₂. Additionally, a critical electric field (~25 kV cm⁻¹) activates a 1st-order response, yielding remarkable inverse piezoelectricity (>1,000 pmV⁻¹). These effects originate from electrostrictive strain-induced phase transitions under critical fields. Our findings provide new insights into electromechanical mechanisms and strain engineering in fluorite thin films, reinforcing HZO’s potential for micro- and nano-electronics.
